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PD - 97035A
PDP SWITCH
Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability
IRFB4227PBF
Key Parameters
200 240 19.7 130 175
D
D
VDS max VDS (Avalanche) typ. RDS(ON) typ. @ 10V IRP max @ TC= 100C TJ max
V V m: A C
G S
G D
S
TO-220AB
D S
G
Description This HEXFET(R) Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
VGS ID @ TC = 25C ID @ TC = 100C IDM IRP @ TC = 100C PD @TC = 25C PD @TC = 100C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 300 10lbxin (1.1Nxm) N
Max.
30 65 46 260 130 330 190 2.2 -40 to + 175
Units
V A
c
Repetitive Peak Current
g
W W/C C
Thermal Resistance
RJC RCS RJA Junction-to-Case
f
Parameter
Typ. --- 0.50 ---
Max. 0.45 --- 62
Units C/W
Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
f
Notes through are on page 8
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IRFB4227PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgd tst EPULSE Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Drain Charge Shoot Through Blocking Time Energy per Pulse
Min.
200 --- --- 3.0 --- --- --- --- --- 49 --- --- 100 --- ---
Typ. Max. Units
--- 170 19.7 --- -13 --- --- --- --- --- 70 23 --- 570 910 4600 460 91 360 4.5 7.5 --- --- 24 5.0 --- 20 1.0 100 -100 --- 98 --- --- --- --- --- --- --- --- --- nH --- pF ns J S nC V m V mV/C A mA nA
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 46A e VDS = VGS, ID = 250A VDS = 200V, VGS = 0V VDS = 200V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 25V, ID = 46A VDD = 100V, ID = 46A, VGS = 10Ve VDD = 160V, VGS = 15V, RG= 4.7 L = 220nH, C= 0.4F, VGS = 15V VDS = 160V, RG= 4.7, TJ = 25C L = 220nH, C= 0.4F, VGS = 15V VDS = 160V, RG= 4.7, TJ = 100C VGS = 0V VDS = 25V = 1.0MHz, VGS = 0V, VDS = 0V to 160V Between lead, 6mm (0.25in.) from package and center of die contact
G S D
mV/C Reference to 25C, ID = 1mA
Ciss Coss Crss Coss eff. LD LS
Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Internal Drain Inductance Internal Source Inductance
--- --- --- --- --- ---
Avalanche Characteristics
Parameter Typ. Max. Units mJ mJ V A
EAS EAR VDS(Avalanche) IAS
Single Pulse Avalanche Energyd Repetitive Avalanche Energy c Repetitive Avalanche Voltage Avalanche Current d c
--- --- 240 ---
140 33 --- 39
Diode Characteristics
Parameter
IS @ TC = 25C Continuous Source Current (Body Diode) ISM VSD trr Qrr Pulsed Source Current (Body Diode) c --- --- --- --- 100 430 1.3 150 640 V ns nC Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- 260
Min.
---
Typ. Max. Units
--- 65 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 46A, VGS = 0V e TJ = 25C, IF = 46A, VDD = 50V di/dt = 100A/s e
2
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IRFB4227PBF
1000
TOP VGS 15V 10V 8.0V 7.0V TOP VGS 15V 10V 8.0V 7.0V BOTTOM
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
BOTTOM
7.0V
100
7.0V
10
10
60s PULSE WIDTH Tj = 25C
0.1 1 10
1 0.1
60s PULSE WIDTH Tj = 175C
1 10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000.0
Fig 2. Typical Output Characteristics
4.0
VDS = 25V
ID, Drain-to-Source Current()
100.0
RDS(on) , Drain-to-Source On Resistance
ID = 46A
3.0
60s PULSE WIDTH
VGS = 10V
10.0
TJ = 175C
(Normalized)
2.0
1.0
TJ = 25C
1.0
0.1 3.0 4.0 5.0 6.0 7.0 8.0
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
1000
1000 900 800
Energy per pulse (J)
700 600 500 400 300 200 100 110 120 130 140 150 160 170
Energy per pulse (J)
L = 220nH C = 0.4F 100C 25C
800
L = 220nH C = Variable 100C 25C
600
400
200
0 130 140 150 160 170 180 190
VDS, Drain-to -Source Voltage (V)
ID, Peak Drain Current (A)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
Fig 6. Typical EPULSE vs. Drain Current
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IRFB4227PBF
1400
L = 220nH
1200
1000.0
Energy per pulse (J)
1000 800 600 400 200 0 25
C= 0.4F C= 0.3F C= 0.2F
ISD , Reverse Drain Current (A)
100.0
TJ = 175C
10.0
1.0
TJ = 25C VGS = 0V
50
75
100
125
150
0.1 0.2 0.4 0.6 0.8 1.0 1.2
Temperature (C)
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical EPULSE vs.Temperature
8000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
Fig 8. Typical Source-Drain Diode Forward Voltage
20
VGS, Gate-to-Source Voltage (V)
ID= 46A VDS = 160V VDS = 100V VDS = 40V
16
6000
C, Capacitance (pF)
Ciss
4000
12
8
2000
Coss
4
Crss
0 1 10 100 1000
0 0 20 40 60 80 100 120 QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
70 60
OPERATION IN THIS AREA LIMITED BY R DS (on) 1sec 100sec 10sec
ID , Drain Current (A)
50 40 30 20 10 0 25 50 75 100 125 150 175
100
10
1 Tc = 25C Tj = 175C Single Pulse 0.1 1 10 100 1000
TC , CaseTemperature (C)
VDS , Drain-to-Source Voltage (V)
Fig 11. Maximum Drain Current vs. Case Temperature
Fig 12. Maximum Safe Operating Area
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IRFB4227PBF
RDS (on), Drain-to -Source On Resistance ( )
EAS, Single Pulse Avalanche Energy (mJ)
0.16
600
ID = 46A
0.12
500
ID 8.6A 14A BOTTOM 39A
TOP
400
0.08
300
TJ = 125C
0.04
200
100
TJ = 25C
0.00 5 6 7 8 9 10
0 25 50 75 100 125 150 175
VGS, Gate-to-Source Voltage (V)
Starting TJ, Junction Temperature (C)
Fig 13. On-Resistance Vs. Gate Voltage
5.0
Fig 14. Maximum Avalanche Energy Vs. Temperature
200
VGS(th) Gate threshold Voltage (V)
4.5 4.0 3.5 3.0 2.5 2.0 1.5 -75 -50 -25 0 25 50 75 100 125 150 175 0 25 50 75 100
ID = 250A
Repetitive Peak Current (A)
160
ton= 1s Duty cycle = 0.25 Half Sine Wave Square Pulse
120
80
40
125
150
175
TJ , Temperature ( C )
Case Temperature (C)
Fig 15. Threshold Voltage vs. Temperature
1
Fig 16. Typical Repetitive peak Current vs. Case temperature
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20 0.10 0.05
J J 1 R1 R1 2 R2 R2 R3 R3 3 C 3
Ri (C/W) i (sec) 0.08698 0.000074 0.2112 0.1506 0.001316 0.009395
0.01
0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
1
2
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 0.001 0.01 0.1
0.001 1E-006 1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFB4227PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 19a. Unclamped Inductive Test Circuit
Fig 19b. Unclamped Inductive Waveforms
Id Vds Vgs
L
0
DUT 1K
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 20a. Gate Charge Test Circuit
Fig 20b. Gate Charge Waveform
6
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IRFB4227PBF
Fig 21a. tst and EPULSE Test Circuit
Fig 21b. tst Test Waveforms
Fig 21c. EPULSE Test Waveforms
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IRFB4227PBF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 IN T HE AS S EMBLY LINE "C" Note: "P" in ass embly line position indicates "Lead - Free" INT ERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER
DATE CODE YEAR 0 = 2000 WEEK 19 LINE C
TO-220AB packages are not recommended for Surface Mount Application.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.18mH, RG = 25, IAS = 39A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. Half sine wave with duty cycle = 0.25, ton=1sec.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/05
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